3CMemory-Home

3CMemory is an ultra-low power silicon based RAM memory estimated to use up to 90% less power than existing technology.

3CMemory has applications that include SRAM and single or multi-bit per cell DRAM, and is suitable for a wide range of devices. The novel design is the first to implement the long desired but previously unattained true multiple bit per cell capability in DRAM that does not require special materials or custom fabrication. The memory is also suitable for embedded DRAM or SRAM applications.

DRAM Advantages

Reduced power consumption
True multi-bit per cell capability
Reduced noise sensitivity
Increased yield
Reduced design cycle time and costs
Allows use of design compiler
Reduced read time
Non-destructive read
Uncertain effect of hold node transistor threshhold voltage cancelled
Large voltage changes on high capacitance bit lines eliminated

SRAM Advantages

Reduced leakage
High speed
Reduced power consumption
Reduced read time
Non-destructive read
Uncertain effect of hold node transistor threshhold voltage cancelled

In general it is the object of this memory to provide a RAM device that reduces power consumption, increases memory capacity, facilitates automated design processes, requires no additional fabrication steps, is relatively economical from the viewpoint of the designer, manufacturer, and consumer, is susceptible to low manufacturing costs with regard to labor and materials and which accordingly is then susceptible to low prices for the consuming public, thereby making it economically available to the buying public.